This paper is published in Volume-4, Issue-2, 2018
Area
Thin Films
Author
Suguna Arivazhaga
Org/Univ
Periyar University, Salem, Tamil Nadu, India
Pub. Date
07 May, 2018
Paper ID
V4I2-2108
Publisher
Keywords
Thin films, Silar coating method, XRD, UV, PL.

Citationsacebook

IEEE
Suguna Arivazhaga. Characterization of tin-doped titanium dioxide thin films prepared by SILAR method, International Journal of Advance Research, Ideas and Innovations in Technology, www.IJARIIT.com.

APA
Suguna Arivazhaga (2018). Characterization of tin-doped titanium dioxide thin films prepared by SILAR method. International Journal of Advance Research, Ideas and Innovations in Technology, 4(2) www.IJARIIT.com.

MLA
Suguna Arivazhaga. "Characterization of tin-doped titanium dioxide thin films prepared by SILAR method." International Journal of Advance Research, Ideas and Innovations in Technology 4.2 (2018). www.IJARIIT.com.

Abstract

The Titanium dioxide and Tin-doped Titanium dioxide thin films were being deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The prepared samples were characterized using X-ray diffraction, Ultraviolet-visible spectroscopy; photoluminescence and Fourier transform infrared spectroscopy. The XRD pattern of the films confirmed tetragonal structure with the polycrystalline nature. The optical transmittance was increased with the decrease in the optical energy band gap. The optical constants such as extinction coefficient and refractive index were determined. The intensity of the photoluminescence emission was observed at 700 nm for doped films. The Fourier Transform Infrared Spectroscopy confirms that a TiO2 phase has been formed. The field dependent conductivity showed an insignificant rise in photocurrent for TiO2 which was in conformity with its wide band gap nature.