This paper is published in Volume-7, Issue-3, 2021
Area
Electronics And Communication Engineering
Author
Nagaraja Sekhar U., Dr. Nithin M.
Org/Univ
Rv College of Engineering, Mumbai, Maharashtra, India
Pub. Date
14 June, 2021
Paper ID
V7I3-1850
Publisher
Keywords
MOSFET, SOA Margin, Hot Swap, Start-up, Inrush Current

Citationsacebook

IEEE
Nagaraja Sekhar U., Dr. Nithin M.. Reliable selection of hot-swap FETs, International Journal of Advance Research, Ideas and Innovations in Technology, www.IJARIIT.com.

APA
Nagaraja Sekhar U., Dr. Nithin M. (2021). Reliable selection of hot-swap FETs. International Journal of Advance Research, Ideas and Innovations in Technology, 7(3) www.IJARIIT.com.

MLA
Nagaraja Sekhar U., Dr. Nithin M.. "Reliable selection of hot-swap FETs." International Journal of Advance Research, Ideas and Innovations in Technology 7.3 (2021). www.IJARIIT.com.

Abstract

Hot Swapping causes a sudden change in the loading conditions of the system which in turn affects the current drawn. Hot-Swap circuits which are used to protect the end equipment employ an external FET which must survive the sudden stress generated from the inrush current. The selection of MOSFET for a hot-swap application is a highly iterative and time-consuming process. This report gives an overview of the concepts and calculations that need to be considered to decide the right MOSFET for the application.